MAHDI POURFATH PDF

Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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In this structure source and drain are composed of a monolayer of graphene and hexagonal boron nitride h-BN is used as a tunneling barrier. We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also mhadi dynamic characteristics of the device.

Computational Single-Electronics Christoph Wasshuber. The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts.

Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices.

Recently, a graphene TFET based on a vertical graphene heterostructure was proposed. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in pourfaty in March An atomistic simulation based on the non-equilibrium Green’s function formalism is employed.

In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes.

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Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs. By using our website you agree to our use of cookies. Tight-binding calculations predict that zigzag GNRs are always metallic, while armchairs can be either metallic or semiconducting, depending on their width.

He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium. Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted pourfaty attention due to its unique physical properties.

His research interests include nanoelectronics, quantum transport, and two-dimensionals. Other 2D pourfatb with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising electrical and optical properties for future electronic applications.

Dissertation Mahdi Pourfath

He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. We use cookies to give you the best possible experience. We have performed a comprehensive analysis on the effect of strain on the mobility of several TMDs MoS 2MoSe 2WS 2and WSe 2employing ab initio simulations of the band structure and the linearized Boltzmann transport equation for mobility evaluation, including the effects of intrinsic phonons, remote phonons, and screened charge impurities.

Mahdi Pourfath MSc Dr. Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most of the materials typically used for strain gauges.

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Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel. The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap.

The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. This material exhibits an extraordinarily high carrier mobility and is considered a major candidate as a future high speed transistor material. Visit our Beautiful Books page and find lovely books for kids, photography lovers and more.

He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree. The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys.

Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time.

There is a good agreement between simulation and experimental results, indicating the validity of the model. In short devices less than nm carrier transport through the device is nearly ballistic. The contact between metal and CNT can be of ohmic or Schottky type. The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair.

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Mahdi Pourfath – Google Scholar Citations

Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. He studied pourath engineering at the Sharif University of Technology, where he received the MSc degree in Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs.

Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility.

His scientific interests include the numerical study of novel nanoelectronic devices. Mahdi Pourfath MSc Dr.

mehdi pourfath,

Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Check out the top books of the year on our page Best Books of In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented.

All simulations were based on the assumption of cylindrical symmetry. In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs. Mahdi Pourfath was born in Tehran, Iran, in